2N5730 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5730  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 30 MHz

Capacitancia de salida (Cc): 150 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO59

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2N5730 datasheet

 9.1. Size:51K  inchange semiconductor
 2n5739.pdf pdf_icon

2N5730

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5739 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= -60V(Min.) Low Collector Saturation Voltage- VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RAT

 9.2. Size:129K  inchange semiconductor
 2n5732.pdf pdf_icon

2N5730

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5732 DESCRIPTION With TO-3 package High current capability APPLICATIONS For linear amplifier and inductive switching applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAME

 9.3. Size:36K  inchange semiconductor
 2n5738.pdf pdf_icon

2N5730

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5738 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min.) Low Collector Saturation Voltage- VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RA

 9.4. Size:36K  inchange semiconductor
 2n5737.pdf pdf_icon

2N5730

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5737 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= -60V(Min.) Low Collector Saturation Voltage- VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RAT

MOSTRAR MÁS

Otros transistores... 2N5711, 2N5712, 2N5713, 2N5714, 2N5715, 2N572, 2N5729, 2N573, 2N3906, 2N5731, 2N5732, 2N5733, 2N5734, 2N5735, 2N5736, 2N5737, 2N5738