RN1962FS Todos los transistores

 

RN1962FS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN1962FS
   Código: J1
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.05 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 1.2 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SOT963 FS6

 Búsqueda de reemplazo de transistor bipolar RN1962FS

 

RN1962FS Datasheet (PDF)

 ..1. Size:130K  toshiba
rn1961fs rn1962fs rn1963fs rn1964fs rn1965fs rn1966fs.pdf

RN1962FS
RN1962FS

RN1961FS~RN1966FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FS,RN1962FS,RN1963FS RN1964FS,RN1965FS,RN1966FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1

 9.1. Size:136K  toshiba
rn1967-rn1969.pdf

RN1962FS
RN1962FS

RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1967,RN1968,RN1969 Unit:mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN

 9.2. Size:191K  toshiba
rn1961ct rn1966ct.pdf

RN1962FS
RN1962FS

RN1961CT~RN1966CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961CT,RN1962CT,RN1963CT RN1964CT,RN1965CT,RN1966CT Switching Applications Unit: mmInverter Circuit Applications 1.00.050.150.03Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a fine pitch Sma

 9.3. Size:544K  toshiba
rn1961fe rn1966fe.pdf

RN1962FS
RN1962FS

RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a trans

 9.4. Size:145K  toshiba
rn1967ct rn1968ct rn1969ct.pdf

RN1962FS
RN1962FS

RN1967CT~RN1969CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967CT,RN1968CT,RN1969CT Switching Applications Unit: mm1.00.05Inverter Circuit Applications 0.150.03Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a fine pitch Small Mold (6 pin)

 9.5. Size:143K  toshiba
rn1961-rn1966.pdf

RN1962FS
RN1962FS

RN1961~RN1966 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1961,RN1962,RN1963 RN1964,RN1965,RN1966 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

 9.6. Size:147K  toshiba
rn1967fe-rn1969fe.pdf

RN1962FS
RN1962FS

RN1967FE~RN1969FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967FE,RN1968FE,RN1969FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count.

 9.7. Size:193K  toshiba
rn1961fe-rn1966fe.pdf

RN1962FS
RN1962FS

RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a trans

 9.8. Size:107K  toshiba
rn1967fs rn1968fs rn1969fs.pdf

RN1962FS
RN1962FS

RN1967FS~RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm1.00.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) 0.80.05 0.10.050.10.05package. Incorporating a bias resis

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History: 2SD1383WB | 2SC2822 | KSD1616AL

 

 
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