RN1968CT Todos los transistores

 

RN1968CT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN1968CT
   Código: J7
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.05 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 1.2 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: CST6

 Búsqueda de reemplazo de transistor bipolar RN1968CT

 

RN1968CT Datasheet (PDF)

 ..1. Size:145K  toshiba
rn1967ct rn1968ct rn1969ct.pdf pdf_icon

RN1968CT

RN1967CT RN1969CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967CT,RN1968CT,RN1969CT Switching Applications Unit mm 1.0 0.05 Inverter Circuit Applications 0.15 0.03 Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a fine pitch Small Mold (6 pin)

 8.1. Size:107K  toshiba
rn1967fs rn1968fs rn1969fs.pdf pdf_icon

RN1968CT

RN1967FS RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm 1.0 0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) 0.8 0.05 0.1 0.05 0.1 0.05 package. Incorporating a bias resis

 9.1. Size:136K  toshiba
rn1967-rn1969.pdf pdf_icon

RN1968CT

RN1967 RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1967,RN1968,RN1969 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN

 9.2. Size:191K  toshiba
rn1961ct rn1966ct.pdf pdf_icon

RN1968CT

RN1961CT RN1966CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961CT,RN1962CT,RN1963CT RN1964CT,RN1965CT,RN1966CT Switching Applications Unit mm Inverter Circuit Applications 1.0 0.05 0.15 0.03 Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a fine pitch Sma

Otros transistores... RN1966CT , RN1966FE , RN1966FS , RN1966 , RN1967CT , RN1967FE , RN1967FS , RN1967 , S8050 , RN1968FE , RN1968FS , RN1968 , RN1969CT , RN1969FE , RN1969FS , RN1969 , RN1970CT .

History: SYL2246 | KTX111T

 

 
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