RN1968FS Todos los transistores

 

RN1968FS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN1968FS
   Código: J7
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.05 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 1.2 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT963 FS6
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RN1968FS Datasheet (PDF)

 ..1. Size:107K  toshiba
rn1967fs rn1968fs rn1969fs.pdf pdf_icon

RN1968FS

RN1967FS~RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm1.00.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) 0.80.05 0.10.050.10.05package. Incorporating a bias resis

 8.1. Size:145K  toshiba
rn1967ct rn1968ct rn1969ct.pdf pdf_icon

RN1968FS

RN1967CT~RN1969CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967CT,RN1968CT,RN1969CT Switching Applications Unit: mm1.00.05Inverter Circuit Applications 0.150.03Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a fine pitch Small Mold (6 pin)

 9.1. Size:136K  toshiba
rn1967-rn1969.pdf pdf_icon

RN1968FS

RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1967,RN1968,RN1969 Unit:mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN

 9.2. Size:191K  toshiba
rn1961ct rn1966ct.pdf pdf_icon

RN1968FS

RN1961CT~RN1966CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961CT,RN1962CT,RN1963CT RN1964CT,RN1965CT,RN1966CT Switching Applications Unit: mmInverter Circuit Applications 1.00.050.150.03Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a fine pitch Sma

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History: 2SC3176 | 2SC1405Z | 2SA2029M3 | 2SC2408 | 2SD1074 | ESM2894 | BU931ZP

 

 
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