RN1969FS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN1969FS  📄📄 

Código: J8

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 47 kOhm

Resistencia Base-Emisor R2 = 22 kOhm

Ratio típica de resistencia R1/R2 = 2.1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.05 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 15 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 1.2 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT963 FS6

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RN1969FS datasheet

 ..1. Size:107K  toshiba
 rn1967fs rn1968fs rn1969fs.pdf pdf_icon

RN1969FS

RN1967FS RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm 1.0 0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) 0.8 0.05 0.1 0.05 0.1 0.05 package. Incorporating a bias resis

 7.1. Size:147K  toshiba
 rn1967fe-rn1969fe.pdf pdf_icon

RN1969FS

RN1967FE RN1969FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967FE,RN1968FE,RN1969FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count.

 8.1. Size:136K  toshiba
 rn1967-rn1969.pdf pdf_icon

RN1969FS

RN1967 RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1967,RN1968,RN1969 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN

 8.2. Size:145K  toshiba
 rn1967ct rn1968ct rn1969ct.pdf pdf_icon

RN1969FS

RN1967CT RN1969CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967CT,RN1968CT,RN1969CT Switching Applications Unit mm 1.0 0.05 Inverter Circuit Applications 0.15 0.03 Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a fine pitch Small Mold (6 pin)

MOSTRAR MÁS

Otros transistores... RN1967FS, RN1967, RN1968CT, RN1968FE, RN1968FS, RN1968, RN1969CT, RN1969FE, TIP3055, RN1969, RN1970CT, RN1970FE, RN1970FS, RN1970, RN1971CT, RN1971FE, RN1971FS