RN1969 Todos los transistores

 

RN1969 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN1969
   Código: XXJ
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 47 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 2.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: SOT363 SC88 US6

 Búsqueda de reemplazo de transistor bipolar RN1969

 

RN1969 Datasheet (PDF)

 0.1. Size:136K  toshiba
rn1967-rn1969.pdf pdf_icon

RN1969

RN1967 RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1967,RN1968,RN1969 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN

 0.2. Size:145K  toshiba
rn1967ct rn1968ct rn1969ct.pdf pdf_icon

RN1969

RN1967CT RN1969CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967CT,RN1968CT,RN1969CT Switching Applications Unit mm 1.0 0.05 Inverter Circuit Applications 0.15 0.03 Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a fine pitch Small Mold (6 pin)

 0.3. Size:147K  toshiba
rn1967fe-rn1969fe.pdf pdf_icon

RN1969

RN1967FE RN1969FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967FE,RN1968FE,RN1969FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count.

 0.4. Size:107K  toshiba
rn1967fs rn1968fs rn1969fs.pdf pdf_icon

RN1969

RN1967FS RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm 1.0 0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) 0.8 0.05 0.1 0.05 0.1 0.05 package. Incorporating a bias resis

Otros transistores... RN1967 , RN1968CT , RN1968FE , RN1968FS , RN1968 , RN1969CT , RN1969FE , RN1969FS , D882 , RN1970CT , RN1970FE , RN1970FS , RN1970 , RN1971CT , RN1971FE , RN1971FS , RN1971 .

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