RN1973FS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN1973FS
Código: JJ
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 47 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.05 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 1.2 pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: SOT963 FS6
Búsqueda de reemplazo de transistor bipolar RN1973FS
RN1973FS Datasheet (PDF)
rn1972fs rn1973fs.pdf
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RN1972CT,RN1973CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1972CT,RN1973CT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.150.03 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. Incorporating a bias resistor i
rn1973.pdf
RN1973 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1973 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications. Two devices are incorporated into an Ultra-Super-Mini (6-pin) package Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enable
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