RN2101 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RN2101RN2106 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101,RN2102,RN2103 RN2104,RN2105,RN2106 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1101~RN1106 Equivalent Circuit and B

RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT Switching Applications Unit: mmInverter Circuit Applications 0.60.050.50.03Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces p

RN2101ACT ~ RN2106ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101ACT,RN2102ACT,RN2103ACT RN2104ACT,RN2105ACT,RN2106ACT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 0.60.050.50.03 Extra small package (CST3) is applicable for extra high density fabrication. Inc

RN2101FS~RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 0.150.05 0.20.05 Incorporating a bias resistor into a transistor reduces parts count. 0.350.05 0.60.05 Red

RN2101FRN2106F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101F,RN2102F,RN2103F RN2104F,RN2105F,RN2106F Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1101F~RN1106F Equivalent Cir

RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor

RN2101MFVRN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.2 0.050.80 0.05 Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the