RN2101
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN2101
Código: YA
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 4.7 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Capacitancia de salida (Cc): 3
pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
SOT416
SC75
SSM
Búsqueda de reemplazo de transistor bipolar RN2101
RN2101
Datasheet (PDF)
..1. Size:256K toshiba
rn2101 rn2102 rn2103 rn2104 rn2105 rn2106.pdf 
RN2101RN2106 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101,RN2102,RN2103 RN2104,RN2105,RN2106 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1101~RN1106 Equivalent Circuit and B
0.1. Size:188K toshiba
rn2101ct rn2106ct.pdf
RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT Switching Applications Unit: mmInverter Circuit Applications 0.60.050.50.03Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces p
0.2. Size:189K toshiba
rn2101act rn2106act.pdf
RN2101ACT ~ RN2106ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101ACT,RN2102ACT,RN2103ACT RN2104ACT,RN2105ACT,RN2106ACT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 0.60.050.50.03 Extra small package (CST3) is applicable for extra high density fabrication. Inc
0.3. Size:167K toshiba
rn2101fs rn2102fs rn2103fs rn2104fs rn2105fs rn2106fs.pdf
RN2101FS~RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 0.150.05 0.20.05 Incorporating a bias resistor into a transistor reduces parts count. 0.350.05 0.60.05 Red
0.4. Size:194K toshiba
rn2101f-rn2106f.pdf
RN2101FRN2106F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101F,RN2102F,RN2103F RN2104F,RN2105F,RN2106F Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1101F~RN1106F Equivalent Cir
0.5. Size:201K toshiba
rn2101ft-rn2106ft.pdf
RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor
0.6. Size:200K toshiba
rn2101mfv rn2102mfv rn2103mfv rn2104mfv rn2105mfv rn2106mfv.pdf
RN2101MFVRN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.2 0.050.80 0.05 Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the
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