RN2102FS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN2102FS 📄📄
Código: U1
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.05 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 1.2 pF
Ganancia de corriente contínua (hFE): 60
Encapsulados: FSM
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RN2102FS datasheet
..1. Size:167K toshiba
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RN2101FS RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 0.15 0.05 0.2 0.05 Incorporating a bias resistor into a transistor reduces parts count. 0.35 0.05 0.6 0.05 Red
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9.7. Size:144K toshiba
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rn2101f-rn2106f.pdf
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rn2101ft-rn2106ft.pdf
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Otros transistores... RN1973, RN2101ACT, RN2101CT, RN2101FS, RN2101MFV, RN2101, RN2102ACT, RN2102CT, 2SA1837, RN2102MFV, RN2102, RN2103ACT, RN2103CT, RN2103FS, RN2103MFV, RN2103, RN2104ACT
