2N5738
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5738
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10
MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2N5738
2N5738
Datasheet (PDF)
..1. Size:36K inchange semiconductor
2n5738.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5738 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RA
9.1. Size:51K inchange semiconductor
2n5739.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5739 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RAT
9.2. Size:129K inchange semiconductor
2n5732.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5732 DESCRIPTION With TO-3 package High current capability APPLICATIONS For linear amplifier and inductive switching applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME
9.3. Size:36K inchange semiconductor
2n5737.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5737 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RAT
9.4. Size:129K inchange semiconductor
2n5734.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5734 DESCRIPTION With TO-3 package High current capability APPLICATIONS For linear amplifier and inductive switching applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
