RN2109FS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN2109FS  📄📄 

Código: U8

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 47 kOhm

Resistencia Base-Emisor R2 = 22 kOhm

Ratio típica de resistencia R1/R2 = 2.1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.05 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 15 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 1.2 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: FSM

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RN2109FS datasheet

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RN2107F RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107F RN1109F Equivalent Circuit and Bias Resister Valu

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RN2107F RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107F RN1109F Equivalent Circuit and Bias Resister V

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