2N5740 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5740  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO66

  📄📄 Copiar 

 Búsqueda de reemplazo de 2N5740

- Selecciónⓘ de transistores por parámetros

 

2N5740 datasheet

 ..1. Size:51K  inchange semiconductor
2n5740.pdf pdf_icon

2N5740

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5740 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min.) Low Collector Saturation Voltage- VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RA

 9.1. Size:237K  motorola
2n4398 2n4399 2n5745.pdf pdf_icon

2N5740

 9.2. Size:158K  mospec
2n4398-99 2n5745.pdf pdf_icon

2N5740

A A A A

 9.3. Size:11K  semelab
2n5743.pdf pdf_icon

2N5740

2N5743 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 60V IC = 20A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

Otros transistores... 2N5733, 2N5734, 2N5735, 2N5736, 2N5737, 2N5738, 2N5739, 2N574, S8550, 2N5741, 2N5742, 2N5743, 2N5744, 2N5745, 2N574A, 2N575, 2N5758