RN2131MFV . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN2131MFV
Código: Y3.
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 100 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 0.9 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT723 VESM
Búsqueda de reemplazo de transistor bipolar RN2131MFV
RN2131MFV Datasheet (PDF)
rn2131mfv rn2132mfv.pdf
RN2131MFV,RN2132MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2131MFV,RN2132MFV Unit : mmSwitching Applications Inverter Circuit Applications Interface Circuit Applications 1.20.05 Driver Circuit Applications 0.80.05 With built-in bias resistors 1 Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Compl
rn2130fv.pdf
RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Built-in bias resistors 1.20.05 Simplified circuit design 0.80.05 Reduced quantity of parts and manufacturing process Complementary to RN1130FV 1 2 3 Equivalent Circuit 1.BASE VESM 2.EMIT
rn2130mfv.pdf
RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Unit : mmInverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 1.20.05 With built-in bias resistors 0.80.05 Simplify circuit design Reduce a quantity of parts and manufacturing process 1
Otros transistores... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2SA1015 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
