RN2317 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN2317
Código: YU
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 4.7 kOhm
Ratio típica de resistencia R1/R2 = 2.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 15 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: SOT323 SC70 USM
Búsqueda de reemplazo de transistor bipolar RN2317
RN2317 Datasheet (PDF)
rn2314 rn2315 rn2316 rn2317 rn2318.pdf
RN2314 RN2318 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2314,RN2315,RN2316,RN2317,RN2318 Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1314 RN1318 Equivalent Circuit and Bias Resistor
rn2310-rn2311.pdf
RN2310,RN2311 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2310,RN2311 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1310, RN1311 Equivalent Circuit Maximum Ratings (Ta = 25 C) JEDE
rn2312-rn2313.pdf
RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1312, RN1313 Equivalent Circuit Maximum Ratings (Ta = 25 C)
Otros transistores... RN2309 , RN2310 , RN2311 , RN2312 , RN2313 , RN2314 , RN2315 , RN2316 , A940 , RN2318 , RN2321A , RN2322A , RN2323A , RN2324A , RN2325A , RN2326A , RN2327A .
History: DDTA124TUA | K2122B | 2SD23 | GCN53 | 2SC2905 | KD606 | BDT62CF
History: DDTA124TUA | K2122B | 2SD23 | GCN53 | 2SC2905 | KD606 | BDT62CF
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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