RN2703JE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN2703JE
Código: YC
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: SOT553 ESV
Búsqueda de reemplazo de transistor bipolar RN2703JE
RN2703JE Datasheet (PDF)
rn2701-rn2706.pdf
RN2701~RN2706 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2701,RN2702,RN2703,RN2704,RN2705,RN2706 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing proc
rn2701je-rn2706je.pdf
RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. Incorporating a bias resistor into a transis
rn2707je-rn2709je.pdf
RN2707JE~RN2709JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2707JE,RN2708JE,RN2709JE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Re
rn2707-rn2709.pdf
RN2707~RN2709 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2707,RN2708,RN2709 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: STD13003L
History: STD13003L
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050