2N576 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N576 📄📄
Material: Ge
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 20 V
Tensión emisor-base (Veb): 15 V
Corriente del colector DC máxima (Ic): 0.4 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO5
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2N576 datasheet
2n5769.pdf
Discrete POWER & Signal Technologies 2N5769 C TO-92 B E NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V V Collector-Base Voltage
2n5758 2n5759 2n5760.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol
2n5758 2n5759 2n5760.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outlin
Otros transistores... 2N5743, 2N5744, 2N5745, 2N574A, 2N575, 2N5758, 2N5759, 2N575A, 8050, 2N5760, 2N5761, 2N5762, 2N5763, 2N5764, 2N5765, 2N5766, 2N5767
Parámetros del transistor bipolar y su interrelación.
History: GT806D | NTE2336 | BFV57 | 2N3584X | BC341-6 | BFX85 | T1328
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