RN2714 Todos los transistores

 

RN2714 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN2714
   Código: YQ
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 1 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SOT353 SC88A USV

 Búsqueda de reemplazo de transistor bipolar RN2714

 

RN2714 Datasheet (PDF)

 ..1. Size:231K  toshiba
rn2714 100514.pdf pdf_icon

RN2714

RN2714 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2714 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Two devices incorporated in a USV (5-pin ultra-super-mini-type) Built-in bias resistors Simplified circuit design Reduced quantity of parts and manufacturing process Equiva

 9.1. Size:108K  toshiba
rn2710 rn2711.pdf pdf_icon

RN2714

RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2710,RN2711 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1

 9.2. Size:169K  toshiba
rn2710je rn2711je.pdf pdf_icon

RN2714

RN2710JE, RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Red

 9.3. Size:255K  toshiba
rn2712je rn2713je.pdf pdf_icon

RN2714

RN2712JE,RN2713JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2712JE, RN2713JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufactur

Otros transistores... RN2709JE , RN2709 , RN2710JE , RN2710 , RN2711JE , RN2711 , RN2712JE , RN2713JE , TIP3055 , RN2901AFS , RN2901FE , RN2901FS , RN2901 , RN2902AFS , RN2902FE , RN2902FS , RN2902 .

History: NJVNJD35N04T4G | 2SD1982 | 2SD1829 | BFV95 | 2SD1841 | KXT5551 | 2SD1846

 

 
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