RN2902FE Todos los transistores

 

RN2902FE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN2902FE
   Código: YB
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SOT563 ES6

 Búsqueda de reemplazo de transistor bipolar RN2902FE

 

RN2902FE Datasheet (PDF)

 9.1. Size:165K  toshiba
rn2907afs rn2909afs.pdf

RN2902FE
RN2902FE

RN2907AFS~RN2909AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2907AFS, RN2908AFS, RN2909AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorpora

 9.2. Size:170K  toshiba
rn2901fs rn2906fs.pdf

RN2902FE
RN2902FE

RN2901FS~RN2906FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2901FS,RN2902FS,RN2903FS RN2904FS,RN2905FS,RN2906FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1

 9.3. Size:554K  toshiba
rn2901fe rn2906fe.pdf

RN2902FE
RN2902FE

RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2901FE,RN2902FE,RN2903FE RN2904FE,RN2905FE,RN2906FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a trans

 9.4. Size:575K  toshiba
rn2901 rn2906.pdf

RN2902FE
RN2902FE

RN2901~RN2906 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2901,RN2902,RN2903,RN2904,RN2905,RN2906 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a qua

 9.5. Size:288K  toshiba
rn2907 rn2909.pdf

RN2902FE
RN2902FE

RN2907~RN2909 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2907,RN2908,RN2909 Switching, Inverter Circuit, Interface Circuit Unit in mmAnd Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementa

 9.6. Size:332K  toshiba
rn2907fe rn2909fe.pdf

RN2902FE
RN2902FE

RN2907FE~RN2909FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2907FE,RN2908FE,RN2909FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Red

 9.7. Size:171K  toshiba
rn2901afs rn2906afs.pdf

RN2902FE
RN2902FE

RN2901AFS~RN2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2906AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-p

 9.8. Size:162K  toshiba
rn2907fs rn2909fs.pdf

RN2902FE
RN2902FE

RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications. 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1 6 Incorporating a bias

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