RN2912AFS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN2912AFS  📄📄 

Código: DH

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 22 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.05 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.08 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 0.9 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT963 FS6

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RN2912AFS datasheet

 ..1. Size:132K  toshiba
 rn2912afs rn2913afs.pdf pdf_icon

RN2912AFS

RN2912AFS, RN2913AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2912AFS, RN2913AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bias

 8.1. Size:117K  toshiba
 rn2912fs rn2913fs.pdf pdf_icon

RN2912AFS

RN2912FS,RN2913FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2912FS, RN2913FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm 1.0 0.05 0.8 0.05 0.1 0.05 Two devices are incorporated into a fine pitch small mold (6-pin) 0.1 0.05 package. Incorporating a bias resistor into a

 9.1. Size:167K  toshiba
 rn2910fe rn2911fe.pdf pdf_icon

RN2912AFS

RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reduc

 9.2. Size:117K  toshiba
 rn2910fs rn2911fs.pdf pdf_icon

RN2912AFS

RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm 1.0 0.05 0.8 0.05 0.1 0.05 Two devices are incorporated into a fine pitch small mold (6-pin) 0.1 0.05 package. Incorporating a bias resistor into a

MOSTRAR MÁS

Otros transistores... RN2910AFS, RN2910FE, RN2910FS, RN2910, RN2911AFS, RN2911FE, RN2911FS, RN2911, 13005, RN2912FS, RN2913AFS, RN2913FS, RN2961CT, RN2961FE, RN2961FS, RN2961, RN2962CT