RN2962CT Todos los transistores

 

RN2962CT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN2962CT
   Código: K1
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.14 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 1.2 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: CST6

 Búsqueda de reemplazo de transistor bipolar RN2962CT

 

RN2962CT Datasheet (PDF)

 8.1. Size:171K  toshiba
rn2961fs rn2962fs rn2963fs rn2964fs rn2964fs rn2966fs.pdf

RN2962CT
RN2962CT

RN2961FS~RN2966FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2961FS,RN2962FS,RN2963FS RN2964FS,RN2965FS,RN2966FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1

 8.2. Size:859K  toshiba
rn2961fe rn2962fe rn2963fe rn2964fe rn2965fe rn2966fe.pdf

RN2962CT
RN2962CT

RN2961FE~RN2966FE PNP (PCT) () RN2961FE, RN2962FE, RN2963FE RN2964FE, RN2965FE, RN2966FE : mm (6)

 9.1. Size:184K  toshiba
rn2967ct rn2969ct.pdf

RN2962CT
RN2962CT

RN2967CT~RN2969CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2967CT,RN2968CT,RN2969CT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.05 0.150.03 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. Incorporating a bia

 9.2. Size:219K  toshiba
rn2967fe-rn2969fe.pdf

RN2962CT
RN2962CT

RN2967FE~RN2969FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2967FE,RN2968FE,RN2969FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count.

 9.3. Size:127K  toshiba
rn2967fs rn2968fs rn2969fs.pdf

RN2962CT
RN2962CT

RN2967FS~RN2969FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2967FS,RN2968FS,RN2969FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1 6 Incorporating a bias

 9.4. Size:212K  toshiba
rn2961ct rn2966ct.pdf

RN2962CT
RN2962CT

RN2961CT~RN2966CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2961CT,RN2962CT,RN2963CT RN2964CT,RN2965CT,RN2966CT Switching Applications Unit: mmInverter Circuit Applications 1.00.050.150.03Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a f

 9.5. Size:142K  toshiba
rn2961-rn2966.pdf

RN2962CT
RN2962CT

RN2961~RN2966 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2961,RN2962,RN2963,RN2964,RN2965,RN2966 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing proc

 9.6. Size:133K  toshiba
rn2967-rn2969.pdf

RN2962CT
RN2962CT

RN2967~RN2969 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2967,RN2968,RN2969 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary

 9.7. Size:100K  toshiba
rn296pfs 090420.pdf

RN2962CT
RN2962CT

RN296PFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN296PFS Switching Applications Unit : mmInverter Circuit Applications Interface Circuit Applications 1.00.050.80.05 0.10.050.10.05Driver Circuit Applications 1 6 Extra small package(CST6) is applicable for extra high density fabrication. 2 5 Since bias resistance is built in the transist

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History: AF379 | TIP31E | BFR98

 

 
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History: AF379 | TIP31E | BFR98

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