RN2969FS Todos los transistores

 

RN2969FS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN2969FS
   Código: K8
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 47 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 2.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.05 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 15 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 1.2 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT963 FS6

 Búsqueda de reemplazo de transistor bipolar RN2969FS

 

RN2969FS Datasheet (PDF)

 ..1. Size:127K  toshiba
rn2967fs rn2968fs rn2969fs.pdf

RN2969FS
RN2969FS

RN2967FS~RN2969FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2967FS,RN2968FS,RN2969FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1 6 Incorporating a bias

 7.1. Size:219K  toshiba
rn2967fe-rn2969fe.pdf

RN2969FS
RN2969FS

RN2967FE~RN2969FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2967FE,RN2968FE,RN2969FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count.

 8.1. Size:184K  toshiba
rn2967ct rn2969ct.pdf

RN2969FS
RN2969FS

RN2967CT~RN2969CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2967CT,RN2968CT,RN2969CT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.05 0.150.03 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. Incorporating a bia

 8.2. Size:133K  toshiba
rn2967-rn2969.pdf

RN2969FS
RN2969FS

RN2967~RN2969 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2967,RN2968,RN2969 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB1707 | 2SB1466

 

 
Back to Top

 


History: 2SB1707 | 2SB1466

RN2969FS
  RN2969FS
  RN2969FS
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
Back to Top