2N5769 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5769 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 500 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO92
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2N5769 datasheet
2n5769.pdf
Discrete POWER & Signal Technologies 2N5769 C TO-92 B E NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V V Collector-Base Voltage
2n5758 2n5759 2n5760.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol
2n5758 2n5759 2n5760.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outlin
Otros transistores... 2N5761, 2N5762, 2N5763, 2N5764, 2N5765, 2N5766, 2N5767, 2N5768, TIP42, 2N576A, 2N5770, 2N5771, 2N5772, 2N5773, 2N5774, 2N5775, 2N5776
Parámetros del transistor bipolar y su interrelación.
History: 2SB278 | 2N3714HS | 2N3764 | NB213XI
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