RN47A1 Todos los transistores

 

RN47A1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN47A1
   Código: 21
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 4.7 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT353 SC88A USV

 Búsqueda de reemplazo de transistor bipolar RN47A1

 

RN47A1 Datasheet (PDF)

 ..1. Size:105K  toshiba
rn47a1.pdf

RN47A1 RN47A1

RN47A1 TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A1 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enab

 0.1. Size:291K  toshiba
rn47a1je.pdf

RN47A1 RN47A1

RN47A1JE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN47A1JE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the

 9.1. Size:266K  toshiba
rn47a5je.pdf

RN47A1 RN47A1

RN47A5JE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN47A5JE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts co

 9.2. Size:107K  toshiba
rn47a5.pdf

RN47A1 RN47A1

RN47A5 TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A5 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en

 9.3. Size:139K  toshiba
rn47a6.pdf

RN47A1 RN47A1

RN47A6 TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A6 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en

 9.4. Size:286K  toshiba
rn47a3je.pdf

RN47A1 RN47A1

RN47A3JE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN47A3JE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts co

 9.5. Size:222K  toshiba
rn47a7je.pdf

RN47A1 RN47A1

RN47A7JE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A7JE Switching Applications Unit: mmInverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces

 9.6. Size:107K  toshiba
rn47a3.pdf

RN47A1 RN47A1

RN47A3 TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A3 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en

 9.7. Size:289K  toshiba
rn47a4je.pdf

RN47A1 RN47A1

RN47A4JE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN47A4JE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts co

 9.8. Size:107K  toshiba
rn47a4.pdf

RN47A1 RN47A1

RN47A4 TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A4 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en

 9.9. Size:290K  toshiba
rn47a2je.pdf

RN47A1 RN47A1

RN47A2JE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN47A2JE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts co

 9.10. Size:107K  toshiba
rn47a2.pdf

RN47A1 RN47A1

RN47A2 TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A2 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications. Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count e

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


RN47A1
  RN47A1
  RN47A1
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: C4977 | BP4N45S | BP4N38S | BP18N98S | BP15N98T | BM8N08A | BM3P03A | BM1P40A | BM05P06B | BM05P06A | BM05N06B | BM03P05 | BM03N05 | BL15P15A | BL15N15A | BL10P15A | BL10N15A | BA16P25A | BA16N25A | BA15P26B | BA15P26A

 

 

 
Back to Top