2N5776 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5776  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 70 W

Tensión colector-base (Vcb): 65 V

Tensión colector-emisor (Vce): 35 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 50 pF

Ganancia de corriente contínua (hFE): 10

Encapsulados: MD36

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2N5776 datasheet

 9.1. Size:585K  fairchild semi
 2n5771 mmbt5771.pdf pdf_icon

2N5776

2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage

 9.2. Size:708K  fairchild semi
 2n5771.pdf pdf_icon

2N5776

2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage

 9.3. Size:28K  fairchild semi
 2n5772.pdf pdf_icon

2N5776

2N5772 NPN Switching Transistor Sourced from process 22. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continued 300 mA TSTG Operating and Storage Junction Temperature Range -

 9.4. Size:295K  fairchild semi
 2n5770.pdf pdf_icon

2N5776

Discrete POWER & Signal Technologies 2N5770 C TO-92 B E NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15

MOSTRAR MÁS

Otros transistores... 2N5769, 2N576A, 2N5770, 2N5771, 2N5772, 2N5773, 2N5774, 2N5775, 13005, 2N578, 2N5781, 2N5782, 2N5783, 2N5784, 2N5784SM, 2N5785, 2N5785SM