2N5776 Todos los transistores

 

2N5776 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N5776
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 70 W
   Tensión colector-base (Vcb): 65 V
   Tensión colector-emisor (Vce): 35 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 50 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: MD36
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2N5776 Datasheet (PDF)

 9.1. Size:585K  fairchild semi
 2n5771 mmbt5771.pdf pdf_icon

2N5776

2N5771 MMBT5771CEC TO-92BBSOT-23EMark: 3RPNP Switching TransistorThis device is designed for very high speed saturated switchingat collector currents to 100 mA. Sourced from Process 65. SeePN4258 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage

 9.2. Size:708K  fairchild semi
 2n5771.pdf pdf_icon

2N5776

2N5771 MMBT5771CEC TO-92BBSOT-23EMark: 3RPNP Switching TransistorThis device is designed for very high speed saturated switchingat collector currents to 100 mA. Sourced from Process 65. SeePN4258 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage

 9.3. Size:28K  fairchild semi
 2n5772.pdf pdf_icon

2N5776

2N5772NPN Switching Transistor Sourced from process 22.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continued 300 mATSTG Operating and Storage Junction Temperature Range -

 9.4. Size:295K  fairchild semi
 2n5770.pdf pdf_icon

2N5776

Discrete POWER & SignalTechnologies2N5770C TO-92BENPN RF TransistorThis device is designed for use as RF amplifiers, oscillators andmultipliers with collector currents in the 1.0 mA to 30 mA range.Sourced from Process 43. See PN918 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15

MOSTRAR MÁS

Otros transistores... 2N5769 , 2N576A , 2N5770 , 2N5771 , 2N5772 , 2N5773 , 2N5774 , 2N5775 , 13001-A , 2N578 , 2N5781 , 2N5782 , 2N5783 , 2N5784 , 2N5784SM , 2N5785 , 2N5785SM .

History: FA4L4K | 2SC2947 | 2SC3281O | BC231B | ECG238 | 2N6192 | 2SC2258B

 

 
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