RN4992AFS
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN4992AFS
Código: VH
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 22 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.05
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.08
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
SOT963
FS6
Búsqueda de reemplazo de transistor bipolar RN4992AFS
RN4992AFS
Datasheet (PDF)
..1. Size:165K toshiba
rn4992afs.pdf 
RN4992AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4992AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bias resistor into
8.1. Size:175K toshiba
rn4992hfe rn4993hfe.pdf
RN4992HFE, RN4993HFE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN4992HFE, RN4993HFE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count.
8.2. Size:167K toshiba
rn4992fs.pdf
RN4992FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN4992FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1 6 Incorporating a bias resistor into a tran
9.1. Size:165K toshiba
rn4990afs.pdf
RN4990AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4990AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bias resistor into
9.2. Size:168K toshiba
rn4990fs.pdf
RN4990FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN4990FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1 6 Incorporating a bias resistor into a trans
9.3. Size:102K toshiba
rn4990fe.pdf
RN4990FE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4990FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts co
9.4. Size:165K toshiba
rn4991afs.pdf
RN4991AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4991AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bias resistor into
9.5. Size:286K toshiba
rn4990.pdf
RN4990 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) RN4990 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing pro
9.6. Size:148K toshiba
rn4991fs.pdf
RN4991FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN4991FS Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.00.050.80.05 0.10.05 0.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1 6 Incorporating a bias resistor into a tran
9.7. Size:148K toshiba
rn4993fs.pdf
RN4993FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN4993FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm1.00.05 Two devices are incorporated into a fine pitch small mold (6-pin) 0.80.05 0.10.050.10.05package. Incorporating a bias resistor into a transistor
9.8. Size:291K toshiba
rn4991.pdf
RN4991 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) RN4991 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing pro
9.9. Size:102K toshiba
rn4991fe.pdf
RN4991FE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4991FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts co
9.10. Size:165K toshiba
rn4993afs.pdf
RN4993AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4993AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bias resistor into
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