2SA1887 Datasheet. Equivalente

 ..1. Size:151K  toshiba
 2sa1887.pdf

2SA1887 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1887 High-Current Switching Applications Unit mm Low collector saturation voltage VCE (sat) = -0.4 V (max) at IC = -5 A Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -7 V Colle

 ..2. Size:153K  jmnic
 2sa1887.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1887 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Coll

 ..3. Size:180K  inchange semiconductor
 2sa1887.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1887 DESCRIPTION Low Collector Saturation Voltage Large Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -80 V C

 8.1. Size:123K  sanyo
 2sa1881.pdf

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 2sa1883.pdf

Ordering number 4660A PNP Epitaxial Planar Silicon Transistor 2SA1883 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturatio voltage. 2106A High gain-bandwidth product. [2SA1883] Small collector capacitance. Very small-sized package permitting 2SA1883- applied sets to be made small and slim. Compl

 8.3. Size:124K  sanyo
 2sa1882.pdf

 8.4. Size:150K  jmnic
 2sa1880.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1880 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em

 8.5. Size:292K  shindengen
 2sa1880.pdf

SHINDENGEN Switching Power Transistor HSV Series OUTLINE DIMENSIONS 2SA1880 Case ITO-220 Unit mm (TP10T8) -10A PNP RATINGS

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 2sa1881.pdf

SMD Type Transistors PNP Transistors 2SA1881 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=-1A 1 2 Collector Emitter Voltage VCEO=-15V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 Complementary to 2SC4983 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

 8.7. Size:946K  kexin
 2sa1882.pdf

SMD Type Transistors PNP Transistors 2SA1882 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-1.5A Collector Emitter Voltage VCEO=-15V Complementary to 2SC4984 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCE

 8.8. Size:184K  inchange semiconductor
 2sa1880.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1880 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -80(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -5A CE(sat) C Large Current Capability-I = -10A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a driver