2SA1887 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1887 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1887 High-Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = -0.4 V (max) at IC = -5 A Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -7 VColle

JMnic Product Specification Silicon PNP Power Transistors 2SA1887 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter -80 V VCEO Coll

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1887DESCRIPTIONLow Collector Saturation VoltageLarge Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -80 VC

Ordering number:4660APNP Epitaxial Planar Silicon Transistor2SA1883High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturatio voltage.2106A High gain-bandwidth product.[2SA1883] Small collector capacitance. Very small-sized package permitting 2SA1883-applied sets to be made small and slim. Compl

JMnic Product Specification Silicon PNP Power Transistors 2SA1880 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

SHINDENGENSwitching Power TransistorHSV SeriesOUTLINE DIMENSIONS2SA1880 Case : ITO-220Unit : mm(TP10T8)-10A PNPRATINGS

SMD Type TransistorsPNP Transistors2SA1881SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=-1A1 2 Collector Emitter Voltage VCEO=-15V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1 Complementary to 2SC49831.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsPNP Transistors2SA1882SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-1.5A Collector Emitter Voltage VCEO=-15V Complementary to 2SC49840.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCE

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1880DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -80(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -5ACE(sat) CLarge Current Capability-I = -10ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a driver