2SA1934 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1934  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.8 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 60 MHz

Capacitancia de salida (Cc): 200 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: TPL

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2SA1934 datasheet

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2SA1934

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 2sa1937.pdf pdf_icon

2SA1934

2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High Voltage Switching Applications Unit mm High voltage VCEO = -600 V Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -600 V Collector-emitter voltage VCEO -600 V Emitter-base voltage VEBO -7 V DC IC -0.5 Collector current A Pulse ICP -1 Base current IB

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 2sa1931.pdf pdf_icon

2SA1934

2SA1931 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications Unit mm Low saturation voltage VCE (sat) = -0.4 V (max) High-speed switching time tstg = 1.0 s (typ.) Complementary to 2SC4881 Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitt

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 2sa1930.pdf pdf_icon

2SA1934

2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 200 MHz (typ.) Complementary to 2SC5171 Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -180 V Collector-emitter voltage VCEO -180 V Emitter-base v

MOSTRAR MÁS

Otros transistores... 2SA1923, 2SA1924, 2SA1925, 2SA1926, 2SA1930, 2SA1931, 2SA1932, 2SA1933, 2SC1815, 2SA1937, 2SA1939, 2SA1940, 2SA1941, 2SA1942, 2SA1962, 2SA1971, 2SA1972