2SA2190 Todos los transistores

2SA2190 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor Type 2SA2190 Unit mm Power Amplifier Applications Driver Stage Amplifier Applications High transition frequency fT = 200 MHz (typ.) Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO - 180 V Collector-emitter voltage VCEO - 180 V Emitter-base voltage VEBO -

2SA2195 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2195 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage VCE (sat) = -0.2 V (max) 1 High-speed switching tf = 90 ns (typ.) 2 3 Absolute Maximum Ratings

2SA2199 Transistors General Purpose Transistor (-50V, -100mA) 2SA2199 Applications Dimensions (Unit mm) Small signal low frequency amplifier VMN3 Features 0.22 0.16 1) Excellent hFE linearity. (3) 2) Complements the 2SC6114. Structure (1) (2) PNP silicon epitaxial 0.37 0.17 0.35 planar transistor 0.6 (1) Base (2) Emitter Abbreviated symbol P (3) C

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA2198 DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -5A CE(sat) C Good Linearity of h FE APPLICATIONS Designed for chopper regulator, switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -70 V CBO V Collector-E