2SA2206
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA2206
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 25
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: PW-MINI
SC62
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2SA2206
Datasheet (PDF)
..1. Size:309K toshiba
2sa2206.pdf 
2SA2206 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2206 Power Amplifier Applications Unit: mm Power Switching Applications Low collector emitter saturation voltage : V = -0.5 V (max) (I = -1A) CE (sat) CHigh-speed switching: t = 300 ns (typ.) stgComplementary to 2SC6124 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base volt
8.1. Size:39K sanyo
2sa2205.pdf
Ordering number : ENA05442SA2205SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2205High-Voltage Switching ApplicationsApplications DC / DC converter, Relay drivers, lamp drivers, motor drivers.Features Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.
8.2. Size:58K sanyo
2sa2202.pdf
Ordering number : ENA0583 2SA2202SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2202High-Voltage Switching ApplicationsApplications DC / DC converters, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switc
8.3. Size:364K onsemi
2sa2205.pdf
Ordering number : ENA0544A2SA2205Bipolar Transistorhttp://onsemi.com-100V, -2A, Low VCE(sat), PNP Single TP/TP-FAApplications DC / DC converter, Relay drivers, lamp drivers, motor driversFeatures Adoption of FBET, MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipationSp
8.4. Size:277K onsemi
2sa2202.pdf
Ordering number : ENA0583A2SA2202Bipolar Transistorhttp://onsemi.com ( )100V, 2A, Low VCE sat PNP Single PCPApplicaitons DC / DC converters, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET, MBIT processes Large current capacity Low collector to emitter saturation voltage High-speed switching High allowable power dis
8.5. Size:285K onsemi
2sa2205-e 2sa2205.pdf
Ordering number : ENA0544A2SA2205Bipolar Transistorhttp://onsemi.com-100V, -2A, Low VCE(sat), PNP Single TP/TP-FAApplications DC / DC converter, Relay drivers, lamp drivers, motor driversFeatures Adoption of FBET, MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipationSp
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