2N579
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N579
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.12
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 15
V
Tensión emisor-base (Veb): 12
V
Corriente del colector DC máxima (Ic): 0.4
A
Temperatura operativa máxima (Tj): 85
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3
MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
TO5
Búsqueda de reemplazo de transistor bipolar 2N579
2N579
Datasheet (PDF)
0.1. Size:67K central
2n5793 2n5794.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
0.2. Size:262K optek
2n5794u.pdf
Product Bulletin JANTX, JANTXV, 2N5794USeptember 1996Surface Mount Dual NPN TransistorType JANTX, JANTXV, 2N5794U.058 (1.47)FeaturesAbsolute Maximum Ratings (TA = 25o C unless otherwise noted)Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 VHermetically sealed Collector-Base V
0.3. Size:243K optek
2n5796u.pdf
Product Bulletin JANTX, JANTXV, 2N5796USeptember 1996Surface Mount Dual PNP TransistorType JANTX, JANTXV, 2N5796U.058 (1.47)Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 VCeramic surface mount packageCollector-Base Voltage . . . . . . . .
0.4. Size:187K microsemi
2n5794u.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /495 DEVICES LEVELS 2N5793 JAN2N5794 2N5794U
0.5. Size:127K microsemi
2n5795-96.pdf
TECHNICAL DATAPNP DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/496 Devices Qualified LevelJAN 2N5796 2N5795 JANTX 2N5796U JANTXV MAXIMUM RATINGS Ratings Symbol Value UnitsCollector-Emitter Voltage 60 VdcVCEO Collector-Base Voltage 60 VdcVCBO Emitter-Base Voltage 5.0 VdcVEBO TO-78* Collector Current 600 mAdcIC Both(2) One(1) Section Sections
0.6. Size:187K microsemi
2n5794uc 2n5794uc 2n5794u.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /495 DEVICES LEVELS 2N5793 JAN2N5794 2N5794U
0.7. Size:123K microsemi
2n5796u.pdf
TECHNICAL DATAPNP DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/496 Devices Qualified LevelJAN 2N5796 2N5795 JANTX 2N5796U JANTXV MAXIMUM RATINGS Ratings Symbol Value UnitsCollector-Emitter Voltage 60 VdcVCEO Collector-Base Voltage 60 VdcVCBO Emitter-Base Voltage 5.0 VdcVEBO TO-78* Collector Current 600 mAdcIC Both(2) One(1) Section Sections
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
