2SC5174 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5174
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.8 W
Tensión colector-base (Vcb): 230 V
Tensión colector-emisor (Vce): 230 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 100 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hfe): 100
Empaquetado / Estuche: TPL
Búsqueda de reemplazo de transistor bipolar 2SC5174
2SC5174 Datasheet (PDF)
1.1. 2sc5174.pdf 
Size:172K _toshiba
4.1. 2sc5171.pdf Size:113K _toshiba
2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1930 Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 180 V Emitter-base voltage VEBO
4.2. 2sc5175.pdf Size:183K _toshiba
4.3. 2sc5172.pdf Size:191K _toshiba
4.4. 2sc5173.pdf Size:230K _toshiba
4.5. 2sc5176.pdf Size:235K _toshiba
4.6. 2sc5179.pdf Size:57K _nec
DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain PACKAGE DIMENSIONS |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm) |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.10.1 Small Mini-Mold package 1.250.1 EIAJ: SC-70 ORDER
4.7. 2sc5177.pdf Size:56K _nec
DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low Current Consumption and High Gain PACKAGE DIMENSIONS |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm) |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.80.2 Mini-Mold package 1.5 0.65+0.1 0.15 EIAJ: SC-59 OR
4.8. 2sc5178.pdf Size:82K _nec
DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain PACKAGE DIMENSIONS |S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm) |S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.8 +0.2 0.3 4-pin Mini-Mold package 1.5 +0.2 0.
4.9. 2sc5171i.pdf Size:488K _blue-rocket-elect
2SC5171I(BR3DA5171I) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-251 Plastic Package. 特征 / Features 特征频率高，与 2SA1930I(BR3CA1930I)互补。 High fT, complementary pair with 2SA1930I(BR3CA1930I). 用途 / Applications 用于一般功率放大和驱动级放大。 General power and d
4.10. 2sc5171s.pdf Size:472K _blue-rocket-elect
2SC5171S(BR3DA5171SQ) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126 Plastic Package. 特征 / Features 特征频率高，与 2SA1930S(BR3CA1930SQ)互补。 High fT, complementary pair with 2SA1930S(BR3CA1930SQ). 用途 / Applications 用于一般功率放大和驱动级放大。 General power an
4.11. 2sc5177.pdf Size:906K _kexin
SMD Type Transistors NPN Transistors 2SC5177 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=10mA 1 2 ● Collector Emitter Voltage VCEO=3V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 5 Collect
Otros transistores... 2SC5000 , 2SC5075 , 2SC5076 , 2SC5122 , 2SC5154 , 2SC5171 , 2SC5172 , 2SC5173 , 2N3563 , 2SC5176 , 2SC5196 , 2SC5197 , 2SC5198 , 2SC5199 , 2SC5201 , 2SC5208 , 2SC5242 .
