2SC5174 Todos los transistores

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2SC5174 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5174

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.8 W

Tensión colector-base (Vcb): 230 V

Tensión colector-emisor (Vce): 230 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: TPL

Búsqueda de reemplazo de transistor bipolar 2SC5174

2SC5174 Datasheet (PDF)

1.1. 2sc5174.pdf Size:172K _toshiba

2SC5174
2SC5174

4.1. 2sc5171.pdf Size:113K _toshiba

2SC5174
2SC5174

2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 180 V Emitter-base voltage VEBO 5 V Co

4.2. 2sc5175.pdf Size:183K _toshiba

2SC5174
2SC5174

4.3. 2sc5172.pdf Size:191K _toshiba

2SC5174
2SC5174

4.4. 2sc5173.pdf Size:230K _toshiba

2SC5174
2SC5174

4.5. 2sc5176.pdf Size:235K _toshiba

2SC5174
2SC5174

4.6. 2sc5179.pdf Size:57K _nec

2SC5174
2SC5174

DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain PACKAGE DIMENSIONS |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm) |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.10.1 Small Mini-Mold package 1.250.1 EIAJ: SC-70 ORDER

4.7. 2sc5177.pdf Size:56K _nec

2SC5174
2SC5174

DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low Current Consumption and High Gain PACKAGE DIMENSIONS |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm) |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.80.2 Mini-Mold package 1.5 0.65+0.1 0.15 EIAJ: SC-59 OR

4.8. 2sc5178.pdf Size:82K _nec

2SC5174
2SC5174

DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain PACKAGE DIMENSIONS |S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm) |S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.8 +0.2 0.3 4-pin Mini-Mold package 1.5 +0.2 0.

4.9. 2sc5171i.pdf Size:488K _blue-rocket-elect

2SC5174
2SC5174

2SC5171I(BR3DA5171I) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-251 Plastic Package. 特征 / Features 特征频率高,与 2SA1930I(BR3CA1930I)互补。 High fT, complementary pair with 2SA1930I(BR3CA1930I). 用途 / Applications 用于一般功率放大和驱动级放大。 General power and d

4.10. 2sc5171s.pdf Size:472K _blue-rocket-elect

2SC5174
2SC5174

2SC5171S(BR3DA5171SQ) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126 Plastic Package. 特征 / Features 特征频率高,与 2SA1930S(BR3CA1930SQ)互补。 High fT, complementary pair with 2SA1930S(BR3CA1930SQ). 用途 / Applications 用于一般功率放大和驱动级放大。 General power an

4.11. 2sc5177.pdf Size:906K _kexin

2SC5174
2SC5174

SMD Type Transistors NPN Transistors 2SC5177 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=10mA 1 2 ● Collector Emitter Voltage VCEO=3V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 5 Collect

Otros transistores... 2SC5000 , 2SC5075 , 2SC5076 , 2SC5122 , 2SC5154 , 2SC5171 , 2SC5172 , 2SC5173 , 2N3563 , 2SC5176 , 2SC5196 , 2SC5197 , 2SC5198 , 2SC5199 , 2SC5201 , 2SC5208 , 2SC5242 .

 


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Introduzca al menos 1 números o letras