Биполярный транзистор 2SC5174 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5174
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.8 W
Макcимально допустимое напряжение коллектор-база (Ucb): 230 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 230 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 20 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: TPL
2SC5174 Datasheet (PDF)
2sc5174.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5174DESCRIPTIONSilicon NPN epitaxial typeLow Collector Saturation VoltageHigh transition frequencyComplementary to 2SA1932Good Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicatio
2sc5171.pdf
2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 180 VCollector-emitter voltage VCEO 180 VEmitter-base voltage VEBO
2sc5177.pdf
DATA SHEETSILICON TRANSISTOR2SC5177NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low Current Consumption and High GainPACKAGE DIMENSIONS|S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm)|S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz2.80.2 Mini-Mold package1.50.65+0.1 0.15EIAJ:
2sc5179.pdf
DATA SHEETSILICON TRANSISTOR2SC5179NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low current consumption and high gainPACKAGE DIMENSIONS|S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm)|S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz2.10.1 Small Mini-Mold package1.250.1EIAJ: SC-
2sc5178.pdf
DATA SHEETSILICON TRANSISTOR2SC5178NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low current consumption and high gainPACKAGE DIMENSIONS|S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz(Units: mm)|S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz2.8 +0.2 0.3 4-pin Mini-Mold package1.5 +
2sc5171s.pdf
2SC5171S(BR3DA5171SQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 NPN Silicon NPN transistor in a TO-126 Plastic Package. / Features 2SA1930S(BR3CA1930SQ) High fT, complementary pair with 2SA1930S(BR3CA1930SQ). / Applications General power an
2sc5171i.pdf
2SC5171I(BR3DA5171I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 NPN Silicon NPN transistor in a TO-251 Plastic Package. / Features 2SA1930I(BR3CA1930I) High fT, complementary pair with 2SA1930I(BR3CA1930I). / Applications General power and d
2sc5177.pdf
SMD Type TransistorsNPN Transistors2SC5177SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=10mA1 2 Collector Emitter Voltage VCEO=3V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 5 Collect
2sc5171.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5171DESCRIPTIONHigh Transition Frenquency : f =200MHz(Typ.)TComplementary to 2SA1930100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
