2SC5361 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5361
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 900 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO220FL
Búsqueda de reemplazo de transistor bipolar 2SC5361
2SC5361 Datasheet (PDF)
2sa608n 2sc536n.pdf
Ordering number : ENN6324A2SA608N / 2SC536NPNP / NPN Epitaxial Planar Silicon Transistors2SA608N / 2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to high unit : mmfrequency range. 2205[2SA608N / 2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.50.450.441
2sa608 2sc536n.pdf
Ordering number:ENN6324PNP/NPN Epitaxial Planar Silicon Transistors2SA608N/2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to highunit:mmfrequency range.2164[2SA608N/2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.450.51.270.45 0.441 2 31 : Emitter
2sc5369.pdf
PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5369NPN EPITAXIAL SILICON TRANSISTOR FORMICROWAVE AMPLIFICATIONFEATURES PACKAGE DIMENSION (in mm) High fT2.10.114 GHz TYP.1.250.1 High gain| S21e | 2 = 14 dB TYP.@f = 2 GHz, VCE = 3 V, IC = 10 mA NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA 6-pin small mini mold packageABSOLUTE MAXIMUM RATINGS (TA = 25 C)
2sc5363 e.pdf
Transistor2SC5363(Tentative)Silicon NPN epitaxial planer typeFor low-voltage high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.1Small collector output capacitance Cob.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)Para
2sc5363.pdf
Transistor2SC5363(Tentative)Silicon NPN epitaxial planer typeFor low-voltage high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.1Small collector output capacitance Cob.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)Para
2sc536n.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SC536N TRANSISTOR (NPN)TO 92 FEATURES 1. EMITTER Large Current Capacity and Wide ASO.2. COLLECTORAPPLICATIONS 3. BASE Capable of Being Used in The Low Frequency to HighFrequency Range. Equivalent Circuit C536N=Device code C536NSolid dot=Green molding compound devi
2sc536s.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC536S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base V
2sc536k.pdf
2SC536(BR3DG536K) 2SC536K(BR3DG536K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Large current capacity and wide ASO / Applications Small signal general purpose amplifier appl
2sc536km 2sc536m.pdf
2SC536KM(BR3DG536KM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Large current capacity and wide ASO. / Applications Small signal general purpose amplifier applications
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
