2SC5361 PDF and Equivalents Search

 

2SC5361 PDF Specs and Replacement


   Type Designator: 2SC5361
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 900 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220FL
 

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2SC5361 PDF detailed specifications

 ..1. Size:206K  toshiba
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2SC5361

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2SC5361

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2SC5361

Ordering number ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2205 [2SA608N / 2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.5 0.45 0.44 1 ... See More ⇒

Detailed specifications: 2SC5351 , 2SC5352 , 2SC5353 , 2SC5354 , 2SC5355 , 2SC5356 , 2SC5358 , 2SC5359 , C1815 , 2SC5368 , 2SC5439 , 2SC5458 , 2SC5459 , 2SC5460 , 2SC5465 , 2SC5466 , 2SC5548 .

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