2SC5703 Todos los transistores

2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage V = 0.12 V (max) CE (sat) High-speed switching t = 55 ns (typ.) f Maximum Ratings (T

Ordering number ENN6913A 2SA2040 / 2SC5707 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2040 / 2SC5707 High Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

Ordering number ENN6914 2SA2043 / 2SC5709 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2043 / 2SC5709 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2045B [2SA2043 / 2SC5709] Features 6.5 Adoption of FBET and MBIT processes. 2.3 5.0 0.5 4 Large current capacitance. Low collector

Ordering number ENN6912B 2SA2039 / 2SC5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 High Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

Ordering number ENN6912 2SA2039 / 2SC5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 High Current Switching Applications Features Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit mm motor drivers, strobes. 2045B Features [2SA2039 / 2SC5706] Adoption of FBET, MBIT process. 6.5 2.3 5.0 Large current capacitance. 0.5 4

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz High fT fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz 6-pin lead-less mini

Ordering number EN6913B 2SA2040/2SC5707 Bipolar Transistor http //onsemi.com (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Ordering number EN6913B 2SA2040/2SC5707 Bipolar Transistor http //onsemi.com (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Ordering number EN6912D 2SA2039/2SC5706 Bipolar Transistor http //onsemi.com (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Ordering number EN6912D 2SA2039/2SC5706 Bipolar Transistor http //onsemi.com (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1435 (Z) Rev.0 Jul. 2001 Features High power gain low noise figure at low power operation S21 2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is WB . 2SC5700 Absolute Maximum Ratings (Ta = 25 C) Parameter Sym

2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-1414 (Z) 1st. Edition Mar. 2001 Features High gain bandwidth product fT = 8 GHz typ. High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is ZS- . 2SC5702 Absolute Maximum Ratings (Ta

2SC5706 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 Features * Large current capacitance D-PAK(TO-252) * Low collector-to-emitter saturation voltage * High-speed switching * High allowable dissipation Mechanical Data * Case Molded Plastic * Weight 0.925 grams ABSOLUTE MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit VCBO 80 V

SMD Type Transistors NPN Transistors 2SC5706 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 Collector Current Capability IC=5A Collector Emitter Voltage VCEO=80V 0.127 High-speed switching. +0.1 0.80-0.1 max Low collector-to-emitter saturation voltage High allowable power dissipation. + 0.1 1 Base 2.3 0

isc Silicon NPN Power Transistor 2SC5706 DESCRIPTION Large current capacitance High-speed switching 100% avalanche tested High allowable power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SA2039 APPLICATIONS DC/DC converter,relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc Silicon NPN Power Transistor 2SC5707 DESCRIPTION Large current capacitance High-speed switching 100% avalanche tested Low collector-to-emitter saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SA2040 APPLICATIONS DC/DC converter,relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T