2SC6010 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6010 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High speed switching tf = 0.24 s (max) (IC = 0.3A) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEX 600 V

Ordering number EN8556 2SC6013 NPN Epitaxial Planar Silicon Transistor 2SC6013 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation.

Ordering number ENN8275 2SA2169 / 2SC6017 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching 2SA2169 / 2SC6017 Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) 2SA2169 Abs

Ordering number EN8275A 2SA2169/2SC6017 Bipolar Transistor http //onsemi.com (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching ( ) 2SA2169 Specifications Absolute Maximum R

Ordering number EN8275A 2SA2169/2SC6017 Bipolar Transistor http //onsemi.com (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching ( ) 2SA2169 Specifications Absolute Maximum R

Power Transistors 2SC6012 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 5 Wide safe oeration area (4.0) 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings TC = 25

2-1 Transistors Absolute Maximum Ratings ICBO hFE VCBO VCEO Ic Pc Conditions Conditions Part Number Applications VCB VCE Ic (V) (V) (A) (W) ( A) (V) min max (V) (A) 2SC2837 Audio, general-purpose 150 150 10 100 100 150 50 180 4 3 2SC2921 Audio, general-purpose 160 160 15 150 100 160 50 180 4 5 2SC2922 Audio, general-purpose 180 180 17 200 100 180 30 180 4 8 2SC3263 Audio, gener

isc Silicon NPN Power Transistor 2SC6011A DESCRIPTION High Power Handling capacity High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA2151A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6017 DESCRIPTION Large current capacitance High-speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SA2169 APPLICATIONS Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA2151 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A Good Linearity of hFE Complement to Type 2SA2151/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min)-2SC6011 (BR)CEO = 200V(Min)-2SC6011A Good Linearity of h FE Complement to Type 2SA2151/A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general pu