2SC6126 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC6126 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 10.5 pF
Ganancia de corriente contínua (hFE): 250
Encapsulados: PW-MINI SC62
📄📄 Copiar
Búsqueda de reemplazo de 2SC6126
- Selecciónⓘ de transistores por parámetros
2SC6126 datasheet
2sc6126.pdf
2SC6126 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 High-Speed Switching Applications Unit mm DC-DC Converter Applications LCD Backlighting Applications High DC current gain hFE = 250 to 400 (IC= 0.3 A) Low collector-emitter saturation VCE(sat) = 0.18 V (max) High-speed switching tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic
2sc6124.pdf
2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO
2sc6125.pdf
2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Unit mm Power Amplifier Applications High DC current gain hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation VCE (sat) = 0.2 V (max) High-speed switching tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector
2sc6127.pdf
2SC6127 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6127 High Voltage Switching Applications Unit mm High Voltage Amplifier Applications High voltage VCEO = 800 V Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 800 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 5 V Collector current IC 5
Otros transistores... 2SC6075, 2SC6076, 2SC6077, 2SC6078, 2SC6079, 2SC6087, 2SC6124, 2SC6125, C3198, 2SC6127, 2SC6136, 2SC6139, 2SC6140, 2SC6142, TPC6501, TPC6502, TPC6503
Parámetros del transistor bipolar y su interrelación.
History: 2SC4684
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L
Popular searches
bc337 | ksc1845 | c1815 transistor | 2sc1815 | irfz44 | 2n5551 | irf540n | irf3205 mosfet







