2SC6142 Datasheet. Equivalente

 ..1. Size:206K  toshiba
 2sc6142.pdf

2SC6142 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6142 Unit mm High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications MAX Excellent switching times tf = 0.15 s (typ.) High collector breakdown voltage VCES = 800

 8.1. Size:173K  toshiba
 2sc6140.pdf

2SC6140 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6140 Audio Frequency Amplifier Applications mm High collector voltage VCEO = 160 V Small collector output capacitance Cob = 12pF (typ.) High transition frequency fT = 100MHz (typ.) Complementary to 2SA2220 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collec

 8.2. Size:68K  sanyo
 2sc6144.pdf

Ordering number ENA1149 2SC6144 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6144 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maxi

 8.3. Size:292K  sanyo
 2sc6144sg.pdf

2SC6144SG Ordering number ENA1800 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6144SG High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switchi

 8.4. Size:239K  onsemi
 2sc6144sg.pdf

Ordering number ENA1800B 2SC6144SG Bipolar Transistor http //onsemi.com ( ) 50V, 10A, Low VCE sat NPN TO-220F-3FS Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.)) Specifications Ab

 8.5. Size:227K  sanken-ele
 2sc6145.pdf

2SC6145 Audio Amplification Transistor Features and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These NPN power transistors achieve Improved sound out

 8.6. Size:226K  sanken-ele
 2sc6145a.pdf

2SC6145A Audio Amplification Transistor Features and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These NPN power transistors achieve Improved sound ou

 8.7. Size:210K  inchange semiconductor
 2sc6144.pdf

isc Silicon NPN Power Transistors 2SC6144 DESCRIPTION Collector-Emitter Saturation Voltage- V = 0.36V(Max.)@I = 6A CE(sat) C Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 8.8. Size:192K  inchange semiconductor
 2sc6145.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6145 DESCRIPTION High frequency multi emitter transistor Small package(TO-3P) High power handling capacity ,160W Complement to Type 2SA2223 Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Signal transistors for audio amplifiers Audio market ABSOLUTE MAXIMUM RATIN