TPCP8504 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 5 8 High DC current gain hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation VCE (sat) = 0.12 V (max) High-speed switching tf = 25 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 2.9 0.1 A 0

TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 100 to 300 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.2 V (max) High-speed switching tf = 100 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 Absolute Maximum Ratings (Ta =

TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TPCP8505 High-Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.14 V (max) High-speed switching tf = 120 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 Absolu

TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit mm DC/DC Converters 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 120 300 (IC = 0.1 A) Low collector-emitter saturation voltage VCE(sat) = 0.14 V (max) High-speed switching tf = 0.2 s (typ.) 0.475 1 4 B 0.05 M B 0.65 2.9 0.1 Absolute Maximum