TPCP8510 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TPCP8510 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8510 Unit: mmHigh-Speed, High-Voltage Switching Applications 0.330.05DC-DC Converter Applications 0.05 M A8 5 High DC current gain: hFE = 120 to 300 (IC = 0.1 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max) 0.475 1 4 High-speed switching: tf = 0.2 s (typ) B0.05 M B0.652.90.1

TPCP8511Bipolar Transistors Silicon NPN Epitaxial TypeTPCP8511TPCP8511TPCP8511TPCP85111. Applications1. Applications1. Applications1. Applications High-Speed Switching DC-DC Converters Photo Flashes2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 250 to 400 (IC = 0.3 A)(2) Low collector-emitter saturation: VCE(sat) = 0.18 V

TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A8 5 High DC current gain : hFE = 100 to 300 (IC = 0.3 A) Low collector-emitter saturation : VCE (sat) = 0.2 V (max) High-speed switching : tf = 100 ns (typ.) 0.475 1 4B0.05 M B0.65Absolute Maximum Ratings (Ta =

TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TPCP8505 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A8 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) 0.475 1 4B0.05 M B0.65Absolu

TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit: mmDC/DC Converters 0.330.05 0.05 M A8 5 High DC current gain: hFE = 120~300 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max) High-speed switching: tf = 0.2 s (typ.) 0.475 1 4B 0.05 M B0.652.90.1Absolute Maximum

TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A58 High DC current gain : hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation : VCE (sat) = 0.12 V (max) High-speed switching : tf = 25 ns (typ.) 0.475 1 4B 0.05 M B0.65 2.90.1A0