TPCP8510 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCP8510
Código: 8510
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.1 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: PS8
Búsqueda de reemplazo de transistor bipolar TPCP8510
TPCP8510 Datasheet (PDF)
tpcp8510.pdf
TPCP8510 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8510 Unit: mmHigh-Speed, High-Voltage Switching Applications 0.330.05DC-DC Converter Applications 0.05 M A8 5 High DC current gain: hFE = 120 to 300 (IC = 0.1 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max) 0.475 1 4 High-speed switching: tf = 0.2 s (typ) B0.05 M B0.652.90.1
tpcp8511.pdf
TPCP8511Bipolar Transistors Silicon NPN Epitaxial TypeTPCP8511TPCP8511TPCP8511TPCP85111. Applications1. Applications1. Applications1. Applications High-Speed Switching DC-DC Converters Photo Flashes2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 250 to 400 (IC = 0.3 A)(2) Low collector-emitter saturation: VCE(sat) = 0.18 V
tpcp8501.pdf
TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A8 5 High DC current gain : hFE = 100 to 300 (IC = 0.3 A) Low collector-emitter saturation : VCE (sat) = 0.2 V (max) High-speed switching : tf = 100 ns (typ.) 0.475 1 4B0.05 M B0.65Absolute Maximum Ratings (Ta =
tpcp8505.pdf
TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TPCP8505 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A8 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) 0.475 1 4B0.05 M B0.65Absolu
tpcp8507.pdf
TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit: mmDC/DC Converters 0.330.05 0.05 M A8 5 High DC current gain: hFE = 120~300 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max) High-speed switching: tf = 0.2 s (typ.) 0.475 1 4B 0.05 M B0.652.90.1Absolute Maximum
tpcp8504.pdf
TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A58 High DC current gain : hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation : VCE (sat) = 0.12 V (max) High-speed switching : tf = 25 ns (typ.) 0.475 1 4B 0.05 M B0.65 2.90.1A0
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
