TPCP8510
Datasheet, Equivalent, Cross Reference Search
Type Designator: TPCP8510
SMD Transistor Code: 8510
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.1
W
Maximum Collector-Base Voltage |Vcb|: 180
V
Maximum Collector-Emitter Voltage |Vce|: 120
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package:
PS8
TPCP8510
Transistor Equivalent Substitute - Cross-Reference Search
TPCP8510
Datasheet (PDF)
..1. Size:211K toshiba
tpcp8510.pdf 
TPCP8510 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8510 Unit: mmHigh-Speed, High-Voltage Switching Applications 0.330.05DC-DC Converter Applications 0.05 M A8 5 High DC current gain: hFE = 120 to 300 (IC = 0.1 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max) 0.475 1 4 High-speed switching: tf = 0.2 s (typ) B0.05 M B0.652.90.1
7.1. Size:184K toshiba
tpcp8511.pdf
TPCP8511Bipolar Transistors Silicon NPN Epitaxial TypeTPCP8511TPCP8511TPCP8511TPCP85111. Applications1. Applications1. Applications1. Applications High-Speed Switching DC-DC Converters Photo Flashes2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 250 to 400 (IC = 0.3 A)(2) Low collector-emitter saturation: VCE(sat) = 0.18 V
8.1. Size:227K toshiba
tpcp8501.pdf
TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A8 5 High DC current gain : hFE = 100 to 300 (IC = 0.3 A) Low collector-emitter saturation : VCE (sat) = 0.2 V (max) High-speed switching : tf = 100 ns (typ.) 0.475 1 4B0.05 M B0.65Absolute Maximum Ratings (Ta =
8.2. Size:210K toshiba
tpcp8505.pdf
TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TPCP8505 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A8 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) 0.475 1 4B0.05 M B0.65Absolu
8.3. Size:171K toshiba
tpcp8507.pdf
TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit: mmDC/DC Converters 0.330.05 0.05 M A8 5 High DC current gain: hFE = 120~300 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max) High-speed switching: tf = 0.2 s (typ.) 0.475 1 4B 0.05 M B0.652.90.1Absolute Maximum
8.4. Size:196K toshiba
tpcp8504.pdf
TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A58 High DC current gain : hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation : VCE (sat) = 0.12 V (max) High-speed switching : tf = 25 ns (typ.) 0.475 1 4B 0.05 M B0.65 2.90.1A0
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