TPCP8604. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

TPCP8604 datasheet

..1. Size:172K toshiba
tpcp8604.pdf pdf_icon

TPCP8604 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type TPCP8604 High-Voltage Switching Applications Unit mm 0.33 0.05 High breakdown voltage VCEO = -400 V 0.05 M A 8 5 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit 0.475 1 4 B Collector-base voltage VCBO -400 V 0.05 M B 0.65 Collector-emitter voltage VCEO -400 V 2.9 0.1 A Emitte

7.1. Size:209K toshiba
tpcp8603.pdf pdf_icon

TPCP8603 TOSHIBA Transistor Silicon PNP Epitaxial Type TPCP8603 High-Speed Switching Applications Unit mm DC/DC Converters 0.33 0.05 0.05 M A 8 5 Strobe Applications High DC current gain hFE = 120 300 (IC = -0.1 A) Low collector-emitter saturation voltage VCE (sat) = -0.2 V (max) 0.475 1 4 B 0.05 M B 0.65 High-speed switching tf = 120 ns (typ.) 2.9

7.2. Size:200K toshiba
tpcp8601.pdf pdf_icon

TPCP8601 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TPCP8601 High-Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 Strobo Flash Applications High DC current gain hFE = 200 to 500 (IC = -0.6 A) Low collector-emitter saturation VCE (sat) = -0.19 V (max) 0.475 1 4 B High-speed switching tf = 35 ns (typ.

7.3. Size:201K toshiba
tpcp8602.pdf pdf_icon

TPCP8602 TOSHIBA Transistor Silicon PNP Epitaxial Type TPCP8602 High-Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 Strobe Flash Applications High DC current gain hFE = 200 to 500 (IC = -0.3 A) Low collector-emitter saturation VCE (sat) = -0.2 V (max) 0.475 1 4 High-speed switching tf = 90 ns (typ.) B 0.05 M B

Otros transistores... TPCP8504 , TPCP8505 , TPCP8507 , TPCP8510 , TPCP8511 , TPCP8601 , TPCP8602 , TPCP8603 , 2N2907 , TPCP8701 , TPCP8901 , TPCP8H01 , TPCP8H02 , TTA0001 , TTA0002 , TTA003 , TTA004B .