2SC5064
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5064
Código: MAO_MAY
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 12
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 0.03
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 7000
MHz
Capacitancia de salida (Cc): 0.7
pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
S-MINI
Búsqueda de reemplazo de transistor bipolar 2SC5064
2SC5064
Datasheet (PDF)
..1. Size:468K toshiba
2sc5064.pdf 
2SC5064 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB
..2. Size:1788K kexin
2sc5064.pdf
SMD Type TransistorsNPN Transistors2SC5064SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec
..3. Size:176K inchange semiconductor
2sc5064.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5064DESCRIPTIONLow Noise and High GainNF = 1.1 dB TYP., S 2= 12 dB TYP.21e@V = 5 V, f = 1.0 GHzCE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF~UHF band low noise amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25
8.2. Size:466K toshiba
2sc5066.pdf
2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB
8.3. Size:466K toshiba
2sc5065.pdf
2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB
8.5. Size:125K toshiba
2sc5066ft.pdf
2SC5066FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3
8.6. Size:106K sanyo
2sc5069.pdf
Ordering number:EN4509NPN Epitaxial Planar Silicon Transistor2SC5069Low-Frequency General-Purpose Amplifier,Driver ApplicationsFeatures Package Dimensions High current capacity.unit:mm Adoption of MBIT process.2038A High DC current gain.[2SC5069] Low collector-to-emitter saturation voltage.4.5 High VEBO.1.51.60.4 0.53 2 10.41.53.01 : Ba
8.7. Size:52K rohm
2sc5060.pdf
2SC5060TransistorsPower transistor (9010V, 3A)2SC5060 External dimensions (Units : mm) Features1) Built-in zener diode between collector and base.2) Zener diode has low voltage dispersion.2.56.83) Strong protection against reverse power surges due to Lloads.4) Darlington connection for high DC current gain.0.65Max.5) Built-in resistor between base and emitter
8.8. Size:62K panasonic
2sc5063.pdf
Power Transistors2SC5063Silicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For high breakdown voltage high-speed switching6.0 0.5 1.0 0.1Features1.5max. 1.1max.High-speed switchingHigh collector to base voltage VCBO0.8 0.1 0.5max.Wide area of safe operation (ASO)2.54 0.3N type package enabling direct soldering of the radiating fin to5.08 0
8.9. Size:1204K kexin
2sc5069.pdf
SMD Type TransistorsNPN Transistors2SC5069SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO
8.10. Size:174K inchange semiconductor
2sc5065.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5065DESCRIPTIONLow Noise and High GainNF = 1.1 dB TYP., S 2= 12 dB TYP.21e@V = 5 V, f = 1.0 GHzCE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF~UHF band low noise amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
