2SC5064 Specs and Replacement
Type Designator: 2SC5064
SMD Transistor Code: MAO_MAY
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 7000 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: S-MINI
- BJT ⓘ Cross-Reference Search
2SC5064 datasheet
..1. Size:468K toshiba
2sc5064.pdf 
2SC5064 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B... See More ⇒
..2. Size:1788K kexin
2sc5064.pdf
SMD Type Transistors NPN Transistors 2SC5064 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec... See More ⇒
8.2. Size:466K toshiba
2sc5066.pdf
2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B... See More ⇒
8.3. Size:466K toshiba
2sc5065.pdf
2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B... See More ⇒
8.5. Size:125K toshiba
2sc5066ft.pdf
2SC5066FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066FT VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 ... See More ⇒
8.6. Size:106K sanyo
2sc5069.pdf
Ordering number EN4509 NPN Epitaxial Planar Silicon Transistor 2SC5069 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions High current capacity. unit mm Adoption of MBIT process. 2038A High DC current gain. [2SC5069] Low collector-to-emitter saturation voltage. 4.5 High VEBO. 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Ba... See More ⇒
8.7. Size:52K rohm
2sc5060.pdf
2SC5060 Transistors Power transistor (90 10V, 3A) 2SC5060 External dimensions (Units mm) Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 2.5 6.8 3) Strong protection against reverse power surges due to L loads. 4) Darlington connection for high DC current gain. 0.65Max. 5) Built-in resistor between base and emitter... See More ⇒
8.8. Size:62K panasonic
2sc5063.pdf
Power Transistors 2SC5063 Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For high breakdown voltage high-speed switching 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High-speed switching High collector to base voltage VCBO 0.8 0.1 0.5max. Wide area of safe operation (ASO) 2.54 0.3 N type package enabling direct soldering of the radiating fin to 5.08 0... See More ⇒
8.9. Size:1204K kexin
2sc5069.pdf
SMD Type Transistors NPN Transistors 2SC5069 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO... See More ⇒
Detailed specifications: TTC009, TTC011, TTC012, TTC013, TTC13003L, TTC5200, 2SC4250FV, 2SC4915, 2N3055, 2SC5065, 2SC5066, 2SC5084, 2SC5085, 2SC5086, 2SC5087, 2SC5087R, 2SC5088
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