2SC5317FT
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5317FT
Código: MT
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1
W
Tensión colector-base (Vcb): 8
V
Tensión colector-emisor (Vce): 5
V
Tensión emisor-base (Veb): 1.5
V
Corriente del colector DC máxima (Ic): 0.02
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 9000
MHz
Capacitancia de salida (Cc): 0.6
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TESM
Búsqueda de reemplazo de transistor bipolar 2SC5317FT
2SC5317FT
Datasheet (PDF)
..1. Size:125K toshiba
2sc5317ft.pdf 
2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm (chip: fT = 16 GHz series) Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: |S |2 = 9dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 8 VCollector-emitter voltage V
7.1. Size:121K toshiba
2sc5317.pdf
2SC5317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317 VHF~UHF Band Low Noise Amplifier Applications Unit: mm (chip: fT = 16 GHz series) Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 9dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 8 VCollector-emitter voltage VCEO 5 VEmi
8.3. Size:169K toshiba
2sc5319.pdf
2SC5319 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 11.5dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 8 VCollector-emitter voltage VCEO 5 VEmitter-base voltage VEBO 1.5
8.5. Size:44K sanyo
2sa1973 2sc5310.pdf
Ordering number:ENN5613PNP/NPN Epitaxial Planar Silicon Transistors2SA1973/2SC5310DC/DC Converter ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacitance.2018B Low collector-to-emitter saturation voltage.[2SA1973/2SC5310] High-speed switching.0.4 Ultrasmall package facilitates miniaturization in end 0.16
8.6. Size:1137K kexin
2sc5310.pdf
SMD Type TransistorsNPN Transistors2SC5310SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=1A1 2 Collector Emitter Voltage VCEO=25V+0.1+0.050.95 -0.1 0.1 -0.01 Complement to 2SA1973 +0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Bas
8.7. Size:353K kexin
2sc5315.pdf
SMD Type TransistorsNPN Transistors2SC5315SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=20mA Collector Emitter Voltage VCEO=5V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 8 Collecto
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