MT3S21P
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MT3S21P
Código: T2
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4
W
Tensión colector-base (Vcb): 12
V
Tensión colector-emisor (Vce): 6
V
Tensión emisor-base (Veb): 2
V
Corriente del colector DC máxima (Ic): 0.08
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 9000
MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: PW-MINI
MT3S21P
Datasheet (PDF)
..1. Size:169K toshiba
mt3s21p.pdf 
MT3S21P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S21P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mmFEATURES Low-Noise Figure: NF=1.55 dB (typ.) (@f=1 GHz) High Gain: |S21e|2=11 dB (typ.) (@f=1 GHz) Marking T 2 PW-Mini JEDEC -JEITA SC-62TOSHIBA 2-5K1AAbsolute Maximum Ratings (Ta = 25C) Weight: 0.05 g (Typ.) Characterist
9.1. Size:178K toshiba
mt3s20p.pdf
MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure: NF=1.45dB(Typ.) (@f=1GHz) High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking M U PW-Mini JEDEC -JEITA SC-62TOSHIBA 2-5K1AAbsolute Maximum Ratings (Ta = 25C) Weight: 0.05 g (Typ.) Characteristi
9.2. Size:189K toshiba
mt3s22p.pdf
MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure: NF=1.5dB(Typ.) (@f=1GHz) High Gain: |S21e|2=10.5dB(Typ.) (@f=1GHz) Marking T 5 PW-Mini JEDEC -JEITA SC-62TOSHIBA 2-5K1AAbsolute Maximum Ratings (Ta = 25C) Weight: 0.05 g (Typ.) Characterist
9.3. Size:182K toshiba
mt3s20r.pdf
MT3S20R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.080.42+0.08-0.050.170.05M A -0.07FEATURES 3 Low Noise Figure:NF=1.45dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=12dB(Typ.) (@ f=1GHz) 120.95 0.952.90.2A Marking 3 1. Base2. Emitter3. Collec
9.4. Size:188K toshiba
mt3s20tu.pdf
MT3S20TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm2.10.11.70.1FEATURES Low Noise Figure:NF=1.45dB(Typ.) (@ f=1GHz) 1 High Gain:|S21e|2=12dB(Typ.) (@ f=1GHz) 3 2 Marking 3 1.BASE M U 2.EMITTER 3.COLLECTOR UFM 1 2 JEDEC -JEITA -TOSHIBA 2-2U1BAbsolu
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