2SB1015A Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1015A
Código: B1015A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 9 MHz
Capacitancia de salida (Cc): 150 pF
Ganancia de corriente contínua (hFE): 60
Encapsulados: TO220NIS
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2SB1015A datasheet
2sb1015a.pdf
2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit mm Low collector saturation voltage VCE (sat) = -1.7 V (max) (I = -3 A, I = -0.3 A) C B Collector power dissipation P = 25 W (Tc = 25 C) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -60
2sb1015.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION With TO-220Fa package Collector power dissipation PC=25W@TC=25 Low collector saturation voltage Complement to type 2SD1406 APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 )
2sb1015.pdf
isc Silicon PNP Power Transistor 2SB1015 DESCRIPTION Low Collector Saturation Voltage- V = -1.7 V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1406 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
Otros transistores... MT3S37FS , MT3S41FS , MT4S03A , MT4S03AU , MT4S03BU , MT4S06U , MT4S23U , MT4S24U , 2SD313 , 2SB1016A , 2SB1018A , 2SB1020A , 2SB1594 , 2SB1617 , 2SB1640 , 2SB1641 , 2SB1642 .
History: 2SC3067 | CS9127
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