2SB1015A - аналоги, параметры транзистора - Справочник транзисторов

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2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit mm Low collector saturation voltage VCE (sat) = -1.7 V (max) (I = -3 A, I = -0.3 A) C B Collector power dissipation P = 25 W (Tc = 25 C) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -60

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JMnic Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION With TO-220Fa package Collector power dissipation PC=25W@TC=25 Low collector saturation voltage Complement to type 2SD1406 APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 )

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isc Silicon PNP Power Transistor 2SB1015 DESCRIPTION Low Collector Saturation Voltage- V = -1.7 V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1406 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

Другие транзисторы: MT3S37FS, MT3S41FS, MT4S03A, MT4S03AU, MT4S03BU, MT4S06U, MT4S23U, MT4S24U, 2SD313, 2SB1016A, 2SB1018A, 2SB1020A, 2SB1594, 2SB1617, 2SB1640, 2SB1641, 2SB1642