2SB1682 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington power transistor) 2SB1682 Unit: mm Power Amplifier Applications High-Power Switching Applications High-breakdown voltage: VCEO = -160 V (min) Complementary to 2SD2636 Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO -160 VCollector-emitter voltag

Ordering number : ENN69602SB1683 / 2SD26392SB1683 : PNP Epitaxial Planar Silicon Transistor2SD2639 : NPN Triple Diffused Planar Silicon Transistor2SB1683 / 2SD2639140V / 12A, AF 60W Output ApplicationsFeaturesPackage Dimensions Wide ASO because of on-chip ballast resistance.unit : mm Good dependence of fT on current and good HF2010Ccharacteristic.[2SB1683 / 2SD26

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SB1689DatasheetGeneral purpose amplification (-12V, -1.5A)lOutlinel SOT-323 Parameter Value SC-70 VCEO-12VIC-1.5AUMT3lFeatures lInner circuitl l1)A collector current is large2)Collector saturation voltage is low.VCE(sat)-200mVat IC=-500mA/IB=-25mAlApplicationlLOW FREQUENCY AMPLIFIER, DRIVERlPackaging

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