2SD2719 Todos los transistores

 ..1. Size:329K  toshiba
 2sd2719.pdf

2SD2719 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) 2SD2719 Solenoid Drive Applications Unit mm Motor Drive Applications High DC current gain h = 2000 (min) (V = 2 V, I = 1 A) FE CE C Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V

 9.1. Size:70K  rohm
 2sd2702.pdf

2SD2702 Transistors General purpose amplification (12V, 1.5A) 2SD2702 Dimensions (Unit mm) Application Low frequency amplifier Features 1) A collector current is large. 2) Collector saturation voltage is low.

 9.2. Size:1231K  rohm
 2sd2707.pdf

2SD2707 Datasheet General Purpose Transistor (50V, 150mA) lOutline l SOT-723 Parameter Value SC-105AA VCEO 50V IC 150mA VMT3 lFeatures lInner circuit l l 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. (Max.VCE(sat)=300mV at IC/IB=50/5mA) lApplication l LOW FREQENCY AMPLIFIER, DRIVER

 9.3. Size:1568K  rohm
 2sd2703.pdf

 9.4. Size:987K  rohm
 2sd2704k.pdf

For Muting (20V, 0.3A) 2SD2704K Features Dimensions (Unit mm) 1) High DC current gain. 2SD2704K hFE = 820 to 2700 SOT-346 2.9 1.1 2) High emitter-base voltage. VEBO = 25V (Min.) 0.4 0.8 3) Low Ron (3) Ron= 0.7 (Typ.) Structure Epitaxial planar type NPN silicon transistor ( ) ( ) 2 1 0.95 0.95 (1) Emitter 0.15 (2) Base 1.9 (3) Collector Each lea

 9.5. Size:144K  rohm
 2sd2704k 2sd2705k.pdf

For Muting (20V, 0.3A) 2SD2704K / 2SD2705S Features Dimensions (Unit mm) 1) High DC current gain. 2SD2704K hFE = 820 to 2700 2.9 1.1 2) High emitter-base voltage. 0.4 0.8 VEBO = 25V (Min.) (3) 3) Low Ron Ron= 0.7 (Typ.) (2) (1) Structure 0.95 0.95 (1) Emitter 0.15 Epitaxial planar type (2) Base 1.9 (3) Collector NPN silicon transistor Each lead ha

 9.6. Size:91K  rohm
 2sd2701.pdf

2SD2701 Transistors Low frequency amplifier 2SD2701 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 350mV At IC = 1A / IB = 50mA ROHM TUMT3 Abbreviated symbol FZ (1) Base (2) Emitter (3) Collector Packaging specifications Absolute maximum ratings (Ta=25 C) Parameter Symbol Limit

 9.7. Size:92K  rohm
 2sd2700.pdf

2SD2700 Transistors Low frequency amplifier 2SD2700 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 180mV at IC = 1A / IB = 50mA ROHM TUMT3 Abbreviated symbol FW (1) Base (2) Emitter (3) Collector Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base volta

 9.8. Size:85K  rohm
 2sd2654 2sd2707 2sd2654 2sd2351 2sd2226k 2sd2227s.pdf

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit mm) 1) High DC current gain. 2SD2707 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.2 0.2 0.8 0.2 (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2) (3) (1) (1) Base